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| HiPerFETTM Power MOSFETs VDSS IXFE44N50QD2 IXFE44N50QD3 500 V IXFE48N50QD2 IXFE48N50QD3 500 V 3 4 ID (cont) 39 A 41A RDS(on) trr 0.12 35 ns 0.11 35 ns 3 Buck & Boost Configurations for PFC & Motor Control Circuits 2 2 4 D2 Symbol VDSS VDGR VGS VGSM HiPerFET MOSFET 1 D3 ISOPLUS 227TM(IXFE) 2 1 1 Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by max. TJM TC = 25C TC = 25C TC = 25C IS IDM, -di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C 44N50Q 48N50Q 44N50Q 48N50Q Maximum Ratings 500 500 20 30 39 41 176 192 48 60 2.5 15 400 600 V V V V A A A A A mJ J V/ns W V A A W C C C V~ V~ ID25 IDM IAR EAR EAS dv/dt PD VRRM 3 2 = Gate 1 = Source 4 3 = Drain 4 = Anode/Cathode IFAVM IFRM PD TJ TJM Tstg TC = 70C; rectangular, d = 0.5 tp <10 s; pulse width limited by TJ TC = 25C 60 800 180 -40 ... +150 150 -40 ... +150 Features * Popular Buck & Boost circuit topologies * Conforms to SOT-227B outline * Isolation voltage 3000 V~ * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Low drain-to-case capacitance (<60 pF) - reduced RFI * Ultra-fast FRED diode with soft reverse recovery Applications * Power factor controls and buck regulators * DC servo and robotic drives * DC choppers DIODE CASE VISOL Md 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s 2500 3000 Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 19 g * Switch reluctance motor controls Advantages * Easy to mount with 2 screws * Space savings * Tightly coupled FRED Weight IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2004 IXYS All rights reserved DS98903C(03/04) IXFE44N50QD2 IXFE44N50QD3 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2 4 100 TJ = 25C TJ = 125C 100 2 0.12 0.11 V V nA A mA IXFE48N50QD2 IXFE48N50QD3 ISOPLUS-227 B VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = 1 mA V DS = VGS, ID = 4 mA V GS = 20 VDC, VDS = 0 V DS = VDSS VGS = 0 V V GS = 10 V, ID = IT 44N50Q 48N50Q Pulse test, t 300 s, duty cycle 2 % Test Conditions Symbol Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 30 36 8000 930 220 33 22 75 10 190 40 86 0.31 0.07 S pF pF pF ns ns ns ns nC nC nC K/W K/W gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V, ID = IT, pulse test VGS = 0 V, VDS = 25 V, f = 1 MHz V GS = 10 V, VDS = 0.5 VDSS, ID = IT RG = 1 (External) V GS = 10 V, VDS = 0.5 VDSS, ID = IT Ultra-fast Diode Symbol IR VF t rr IRM RthJC RthJK Test Conditions TJ= 25C; VR= VRRM TJ= 150C; VR= 0.8VRRM IF = 60A, VGS = 0 V Note1 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 200 2.5 2.05 TJ = 150C 35 1.4 50 8.3 A mA V V ns A Please note: For characteristic curves please see IXFK48N50Q II = 1A, di/dt = -200 A/s, VR = 30 V, TJ = 25C IF= 60A, di/dt = -100 A/s, VR = 100 V, TJ = 100C 0.05 0.7 K/W K/W Note: 1. Pulse test, t 300 s, duty cycle d 2 % 2. IXFE44N50 IT = 22A IXFE48N50 IT = 24A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 |
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